Microstructural dependence of electrical transport in bulk CuxGe1−x alloys

VITTA, SATISH; TANTRI, SHRIKARI  P

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dc.contributor.author	VITTA, SATISH	en_US
dc.contributor.author	TANTRI, SHRIKARI P	en_US
dc.date.accessioned	2009-06-13T05:11:43Z	en_US
dc.date.accessioned	2011-12-08T07:57:41Z	en_US
dc.date.accessioned	2011-12-26T13:02:31Z	en_US
dc.date.accessioned	2011-12-27T05:48:57Z
dc.date.available	2009-06-13T05:11:43Z	en_US
dc.date.available	2011-12-08T07:57:41Z	en_US
dc.date.available	2011-12-26T13:02:31Z	en_US
dc.date.available	2011-12-27T05:48:57Z
dc.date.issued	1998	en_US
dc.identifier.citation	Materials Science and Engineering B 52(2-3), 185-188	en_US
dc.identifier.issn	0921-5107	en_US
dc.identifier.uri	10.1016/S0921-5107(97)00275-4	en_US
dc.identifier.uri	http://hdl.handle.net/10054/1477	en_US
dc.identifier.uri	http://dspace.library.iitb.ac.in/xmlui/handle/10054/1477	en_US
dc.description.abstract	The electrical transport behavior in bulk processed Cu78.8Ge21.2 and Cu77.4Ge22.6 alloys has been studied as a function of temperature. The room temperature resistivity of the alloy with 21.2 at.% Ge was found to be 4.9 μΩ cm, an order of magnitude lower compared to the resistivity of the 22.6 at.% Ge alloy. The resistivity of both the alloys is different compared to thin films of equivalent composition which were prepared by a high temperature solid state reaction process. The difference in behavior is found to be due to the microstructure, volume fraction and morphology of the different phases, which depends on the actual method of processing the material.	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.subject	Crystalline Materials	en_US
dc.subject	Microstructure	en_US
dc.subject	Temperature	en_US
dc.subject	Volume Fraction	en_US
dc.title	Microstructural dependence of electrical transport in bulk CuxGe1−x alloys	en_US
dc.type	Article	en_US
dc.description.copyright	© Elsevier	en_US