Silicon quantum dots growth in sin(x) dielectric: a review

Abstract

This paper reviews research works carried out on silicon quantum dots (Si-QDs) embedded in the silicon nitride (SiN(x)) dielectric matrix films with different fabrication techniques and different characteristics. The advantages of SiN(x) as a dielectric compared to silicon dioxide (SiO(2)) for Si-QDs from a device point of view are discussed. Various fabrication techniques along with different optimized deposition conditions are summarized. The typical results of structural characteristics of the films with Raman spectroscopy and Transmission Electron Microscopy (TEM) are discussed. The origin of photoluminescence (PL) from the films and the chemical compositional analysis such as X-Ray Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR) and Secondary Ion Mass Spectroscopy ( SIMS) analysis of the films are also made available in brief. The charge conduction mechanism in the films with metal-insulator-semiconductor (MIS) structure, with their electrical characterization like capacitance-voltage (C-V) and current-voltage (I-V) measurements are presented.