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Showing 8 out of a total of 8 results for community: IITB Publications. (0.008 seconds)

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Comparison of luminescence properties of bilayer and multilayer InAs/GaAs quantum dots

SHAH, SY; HALDER, N; SENGUPTA, S; CHAKRABARTI, S (PERGAMON-ELSEVIER SCIENCE LTD, 2012)
Effects of ex situ annealing on quaternary alloy (InAlGaAs) capped InAs/GaAs quantum dot heterostructures on optimization of optoelectronic and structural properties with variation in growth rate, barrier thickness, and seed quantum dot monolayer coverage

MANDAL, A; VERMA, U; CHAKRABARTI, S (ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2013)
Thermal stability of quaternary alloy (InAlGaAs)-capped InAs/GaAs multilayer quantum dot heterostructures with variation in growth rate, barrier thickness, seed quantum dot monolayer coverage, and post-growth annealing

MANDAL, A; VERMA, U; CHAKRABARTI, S (SPRINGER, 2013)
The impact of monolayer coverage, barrier thickness and growth rate on the thermal stability of photoluminescence of coupled InAs/GaAs quantum dot hetero-structure with quaternary capping of InAlGaAs

MANDAL, A; VERMA, U; HALDER, N; CHAKRABARTI, S (PERGAMON-ELSEVIER SCIENCE LTD, 2012)
High nitrogen composition-induced low interfacial roughness of GaAs0.978N0.022/GaAs multiple quantum wells grown through solid-source molecular beam epitaxy

BISWAS, M; TONGBRAM, B; SHINDE, N; MAKKAR, RL; BHATNAGAR, A; CHAKRABARTI, S (PERGAMON-ELSEVIER SCIENCE LTD, 2017)
A multicolor, broadband (5-20 mu m), quaternary-capped InAs/GaAs quantum dot infrared photodetector

ADHIKARY, S; AYTAC, Y; MEESALA, S; WOLDE, S; PERERA, AGU; CHAKRABARTI, S (AMER INST PHYSICS, 2012)
Vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin spacer layer

CHAKRABARTI, S; HALDER, N; SENGUPTA, S; GHOSH, S; MISHIMA, TD; STANLEY, CR (IOP PUBLISHING LTD, 2008)
Comparison of Three Design Architectures for Quantum Dot Infrared Photodetectors: InGaAs-Capped Dots, Dots-in-a-Well, and Submonolayer Quantum Dots

GHADI, H; SENGUPTA, S; SHETTY, S; MANOHAR, A; BALGARKASHI, A; CHAKRABARTI, S; PENDYALA, NB; PRAJAPATI, SL; KUMAR, A (IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2015)

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