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Comparison of sub-bandgap impact ionization in sub-100 nm conventional and lateral asymmetrical channel nMOSFETs

ANIL, K; MAHAPATRA, S; RAO, VR; EISELE, I (INST PURE APPLIED PHYSICS, 2001)
On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: can differences in insulator processing conditions resolve the interface trap generation versus hole trapping controversy?

MAHAPATRA, S; AHMED, K; VARGHESE, D; ISLAM, AE; GUPTA, G; MADHAV, L; SAHA, D; ALAM, MA (IEEE, 2007)
Isolation of NBTI Stress Generated Interface Trap and Hole-Trapping Components in PNO p-MOSFETs

MAHAPATRA, S; MAHETA, VD; ISLAM, AE; ALAM, MA (IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2009)
CHISEL flash EEPROM - Part II: Reliability

MAHAPATRA, S; SHUKURI, S; BUDE, J (IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2002)
CHISEL flash EEPROM - Part I: Performance and scaling

MAHAPATRA, S; SHUKURI, S; BUDE, J (IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2002)
A study of hot-carrier induced interface-trap profiles in lateral asymmetric channel MOSFETs using a novel charge pumping technique

MAHAPATRA, S; RAO, VR; VASI, J; CHENG, B; WOO, JCS (PERGAMON-ELSEVIER SCIENCE LTD, 2001)

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