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Effect of Metal Gate Granularity Induced Random Fluctuations on Si Gate-All-Around Nanowire MOSFET 6-T SRAM Cell Stability

BAJAJ, M; NAYAK, K; GUNDAPANENI, S; RAO, VR (IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2016)
A Novel Table-Based Approach for Design of FinFET Circuits

THAKKER, RA; SATHE, C; SACHID, AB; BAGHINI, MS; RAO, VR; PATIL, MB (IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2009)

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