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Implications of fin width scaling on variability and reliability of high-k metal gate FinFETs
CHABUKSWAR, S
;
MAJI, D
;
MANOJ, CR
;
ANIL, KG
;
RAO, VR
;
CRUPI, F
;
MAGNONE, P
;
GIUSI, G
;
PACE, C
;
COLLAERT, N
(
ELSEVIER SCIENCE BV
,
2010
)
Fabrication and Analysis of a Si/Si0.55Ge0.45 Heterojunction Line Tunnel FET
WALKE, AM
;
VANDOOREN, A
;
ROOYACKERS, R
;
LEONELLI, D
;
HIKAVYY, A
;
LOO, R
;
VERHULST, AS
;
KAO, KH
;
HUYGHEBAERT, C
;
GROESENEKEN, G
;
RAO, VR
;
BHUWALKA, KK
;
HEYNS, MM
;
COLLAERT, N
;
THEAN, AVY
(
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
,
2014
)
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Author
COLLAERT, N (2)
RAO, VR (2)
ANIL, KG (1)
BHUWALKA, KK (1)
CHABUKSWAR, S (1)
CRUPI, F (1)
GIUSI, G (1)
GROESENEKEN, G (1)
HEYNS, MM (1)
HIKAVYY, A (1)
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Subject
Performance (2)
Devices (1)
Field-Induced Quantum Confinement (Fiqc) (1)
Finfets (1)
Fiqc Effect (1)
Gate Length And Width Dependence (1)
Hot-Carriers (1)
Impact (1)
Line Tunneling (1)
Negative Bias Instability (1)
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Date Issued
2010 (1)
2014 (1)
Has File(s)
No (2)