MAJI, D; CRUPI, F; MAGNONE, P; GIUSI, G; PACE, C; SIMOEN, E; RAO, VR
(IEEE, 2009)
The interface trap density of fresh TiN/TaN gated HfO(2)/SiO(2)/Si/cpi-Ge pMOSFETs is measured using the DCIV technique. Its temperature dependence is also discussed here. We observe a polarity dependent DCIV peak shift. ...