KAKUSHIMA, K; TSUTSUI, K; OHMI, SI; AHMET, P; RAO, VR; IWAI, H
(SPRINGER-VERLAG BERLIN, 2007)
A feasibility study of rare earth oxides for replacing SiO2 gate oxide for CMOS integrated circuits has been conducted. Rare earth oxides have relatively higher dielectric constants and are suitable as gate dielectrics. ...