UPADHYAY B.B.; SURAPANENI S.; YADAV Y.K.; BHARDWAJ N.; SUVACHINTAK N.; GANGULY S.; SAHA D.
(Aluminum alloysBinary alloysDeteriorationGallium nitrideGate dielectricsHigh-k dielectricIII-V semiconductorsInterface statesLeakage currentsSurface roughnessTantalum oxidesControl samplesGate-leakageGate-leakage currentHigh electron-mobility transistorsHigh- kI ON/I OFFInterface trapsOxide high electron-mobility transistorOxide thicknessPerformanceHigh electron mobility transistors, 10−11 A mm)
https://dx.doi.org/10.1002/pssa.202100839