Exploration of velocity overshoot in a high-performance deep sub-0.1-mu m SOI MOSFET with asymmetric channel profile
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The electron velocity overshoot phenomenon in the inversion layer is experimentally investigated using a novel thin-film silicon-on-insulator (SOI) test structure with channel lengths down to 0.08 mu m, The uniformity of the carrier density and tangential field is realized by employing a lateral asymmetric channel (LAC) profile. The electron drift velocity observed in this work is 9.5 x 10(6) cm/s for a device with L(eff) = 0.08 mu m at 300 K. The upward trend in electron velocity can be clearly noticed for decreasing channel lengths.
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