Exploration of velocity overshoot in a high-performance deep sub-0.1-mu m SOI MOSFET with asymmetric channel profile

DSpace/Manakin Repository

Exploration of velocity overshoot in a high-performance deep sub-0.1-mu m SOI MOSFET with asymmetric channel profile

Show full item record

Title: Exploration of velocity overshoot in a high-performance deep sub-0.1-mu m SOI MOSFET with asymmetric channel profile
Author: CHENG, BH; RAO, VR; WOO, JCS
Abstract: The electron velocity overshoot phenomenon in the inversion layer is experimentally investigated using a novel thin-film silicon-on-insulator (SOI) test structure with channel lengths down to 0.08 mu m, The uniformity of the carrier density and tangential field is realized by employing a lateral asymmetric channel (LAC) profile. The electron drift velocity observed in this work is 9.5 x 10(6) cm/s for a device with L(eff) = 0.08 mu m at 300 K. The upward trend in electron velocity can be clearly noticed for decreasing channel lengths.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/8324
http://hdl.handle.net/10054/8324
Date: 1999


Files in this item

Files Size Format View

There are no files associated with this item.

This item appears in the following Collection(s)

Show full item record

Search DSpace


Advanced Search

Browse

My Account