Role of electron traps in the radiation hardness of thermally nitrided silicon dioxide

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Role of electron traps in the radiation hardness of thermally nitrided silicon dioxide

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Title: Role of electron traps in the radiation hardness of thermally nitrided silicon dioxide
Author: CHANDORKAR, AN; RAMESH, K; AGARWAL, A; VASI, J
Abstract: A number of samples of thermally nitrided SiO2 with varying concentrations of electron traps were studied in an attempt to correlate the radiation-induced oxide charge with the number of electron traps. Also studied were the detrapping characteristics of irradiated devices. Etch-back experiments were performed to locate the centroid of the trapped charge. The results show that electron trapping does play a role in the improved radiation hardness of nitrided SiO2, but is not the sole cause of it.
URI: http://dx.doi.org/10.1109/55.116946
http://hdl.handle.net/10054/83
http://dspace.library.iitb.ac.in/xmlui/handle/10054/83
Date: 1991


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