Implications of fin width scaling on variability and reliability of high-k metal gate FinFETs

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Implications of fin width scaling on variability and reliability of high-k metal gate FinFETs

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Title: Implications of fin width scaling on variability and reliability of high-k metal gate FinFETs
Author: CHABUKSWAR, S; MAJI, D; MANOJ, CR; ANIL, KG; RAO, VR; CRUPI, F; MAGNONE, P; GIUSI, G; PACE, C; COLLAERT, N
Abstract: In this paper, we report a study to understand the fin width dependence on performance, variability and reliability of n-type and p-type triple-gate fin field effect transistors (FinFETs) with high-k dielectric and metal gate. Our results indicate that with decreasing fin width the well-known performance improvement in terms of sub-threshold swing and drain-induced barrier lowering are accompanied by a degradation of the variability and the reliability. As a matter of fact fin width scaling causes (i) higher hot-carrier degradation (HC) in nFinFETs owing to the higher charge carrier temperature for the same internal stress voltages: (ii) worse negative bias temperature instability (NBTI) in pFinFETs due to the increased contribution from the (1 1 0) surface: (iii) higher variability due to the non-uniform fin extension doping, as highlighted by applying a novel characterization technique. (C) 2009
URI: http://dx.doi.org/10.1016/j.mee.2009.12.013
http://dspace.library.iitb.ac.in/xmlui/handle/10054/6666
http://hdl.handle.net/10054/6666
Date: 2010


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