Capacitance degradation due to fringing field in deep sub-micron MOSFETs with High-K gate dielectrics

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Capacitance degradation due to fringing field in deep sub-micron MOSFETs with High-K gate dielectrics

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Title: Capacitance degradation due to fringing field in deep sub-micron MOSFETs with High-K gate dielectrics
Author: INANI, A; RAMGOPAL RAO, V; CHENG, B; ZEITZOFF, P; WOO, JCS
Abstract: High-K gate dielectrics have been under extensive investigation for use in sub -100nm MOSFET's to suppress gate leakage.However,thicker gate dielectrics can result in degradation of the electrical performance due to increased fringing fields from the gate to source/drain. In this paper the capacitance degradation resulting from this effect is analyzed & simple technique to model this effect is presented.
URI: http://hdl.handle.net/10054/579
http://dspace.library.iitb.ac.in/xmlui/handle/10054/579
Date: 1999


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