Capacitance degradation due to fringing field in deep sub-micron MOSFETs with High-K gate dielectrics
RAMGOPAL RAO, V
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High-K gate dielectrics have been under extensive investigation for use in sub -100nm MOSFET's to suppress gate leakage.However,thicker gate dielectrics can result in degradation of the electrical performance due to increased fringing fields from the gate to source/drain. In this paper the capacitance degradation resulting from this effect is analyzed & simple technique to model this effect is presented.
- Proceedings papers