Anhydrous silanization and antibody immobilization on hotwire CVD deposited silicon oxynitride films

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Anhydrous silanization and antibody immobilization on hotwire CVD deposited silicon oxynitride films

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Title: Anhydrous silanization and antibody immobilization on hotwire CVD deposited silicon oxynitride films
Author: JOSHI, M; SINGH, S; SWAIN, B; PATIL, SAMADHAN B; DUSANE, RO; RAMGOPAL RAO, V; MUKHERJI, SOUMYA
Abstract: Hotwire CVD (HWCVD) deposited silicon rich nitride films were treated with O2 plasma using RF plasma setup. The thickness of this oxynitride film was measured using spectroscopic ellipsometry. The film was treated with [3-(2-aminoethyl) aminopropyl]-trimethoxysilane (AEAPS) followed by immobilization of human immunoglobulin (HIgG) on it. Surface morphology at various stages of experimentation was studied using AFM. Antibody immobilized surface is further investigated using fluorescence microscopy.
URI: 10.1109/INDICO.2004.1497814
http://hdl.handle.net/10054/577
http://dspace.library.iitb.ac.in/xmlui/handle/10054/577
Date: 2004


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