Anhydrous silanization and antibody immobilization on hotwire CVD deposited silicon oxynitride films
PATIL, SAMADHAN B
RAMGOPAL RAO, V
MetadataShow full item record
Hotwire CVD (HWCVD) deposited silicon rich nitride films were treated with O2 plasma using RF plasma setup. The thickness of this oxynitride film was measured using spectroscopic ellipsometry. The film was treated with [3-(2-aminoethyl) aminopropyl]-trimethoxysilane (AEAPS) followed by immobilization of human immunoglobulin (HIgG) on it. Surface morphology at various stages of experimentation was studied using AFM. Antibody immobilized surface is further investigated using fluorescence microscopy.
- Proceedings papers