Comprehensive simulation of program, erase and retention in charge tapping flash memories

DSpace/Manakin Repository

Comprehensive simulation of program, erase and retention in charge tapping flash memories

Show full item record

Title: Comprehensive simulation of program, erase and retention in charge tapping flash memories
Author: PAUL, A; CHSRIDHAR; GEDAM, S; MAHAPATRA, S
Abstract: A simulator is developed for SONOS flash memories to predict program (P), erase (E) and retention (R) behavior under uniform ID operation. It provides insight on the impact of trap parameters on P, E and R and can be used to optimize memory stacks.
URI: 10.1109/IEDM.2006.346793
http://hdl.handle.net/10054/548
http://dspace.library.iitb.ac.in/xmlui/handle/10054/548
Date: 2006


Files in this item

Files Size Format View
4154212.pdf 235.9Kb PDF View/Open

This item appears in the following Collection(s)

Show full item record

Search DSpace


Advanced Search

Browse

My Account