A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs

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A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs

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Title: A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs
Author: MAHAPATRA, S; PARIKH, CD; VASI, J; RAMGOPAL RAO, V; VISWANATHAN, CR
Abstract: A new charge pumping (CP) technique is proposed to obtain the spatial profile of interface-state density (Nit) and oxide charges (Not) near the drain junction of hot-carrier stressed MOSFETs. Complete separation of Nit from Not is achieved by using a direct noniterative method. The pre-stress CP edge is corrected for the charges associated with both the generated Nit and Not. A closed form model is developed to predict the stress-induced incremental CP current. The damage distributions are obtained after fitting the model with experimental data.
Description: Copyright to Elsevier Publisher
URI: http://dx.doi.org/10.1016/S0038-1101(98)00326-8
http://hdl.handle.net/10054/50
http://dspace.library.iitb.ac.in/xmlui/handle/10054/50
Date: 1999


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