Nanocrystalline gallium nitride thin films

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Nanocrystalline gallium nitride thin films

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Title: Nanocrystalline gallium nitride thin films
Author: PRESCHILLA, N; MAJOR, S; KUMAR, N; SAMAJDAR, I; SRINIVASA, RS
Abstract: Nanocrystalline gallium nitride (GaN) thin films were deposited on quartz substrates by reactive rf sputtering of GaAs target with nitrogen as the reactive cum sputtering gas. X-ray diffraction and transmission electron microscopy confirmed the presence of GaN crystallites with particle size increasing from 3 to 16 nm, as the substrate temperature was increased from 400 to 550 degrees C. The particle size in films grown at temperatures below 550 degrees C were less than the exciton Bohr radius of GaN. The band gap of these films obtained from absorption and photoluminescence measurements showed a blueshift with respect to bulk GaN. (C) 2000 [S0003-6951(00)03138-7].
URI: http://dx.doi.org/10.1063/1.1311595
http://dspace.library.iitb.ac.in/xmlui/handle/10054/4395
http://hdl.handle.net/10054/4395
Date: 2000


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