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    Nanocrystalline gallium nitride thin films

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    Date
    2000
    Author
    PRESCHILLA, N
    MAJOR, S
    KUMAR, N
    SAMAJDAR, I
    SRINIVASA, RS
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    Abstract
    Nanocrystalline gallium nitride (GaN) thin films were deposited on quartz substrates by reactive rf sputtering of GaAs target with nitrogen as the reactive cum sputtering gas. X-ray diffraction and transmission electron microscopy confirmed the presence of GaN crystallites with particle size increasing from 3 to 16 nm, as the substrate temperature was increased from 400 to 550 degrees C. The particle size in films grown at temperatures below 550 degrees C were less than the exciton Bohr radius of GaN. The band gap of these films obtained from absorption and photoluminescence measurements showed a blueshift with respect to bulk GaN. (C) 2000 [S0003-6951(00)03138-7].
    URI
    http://dx.doi.org/10.1063/1.1311595
    http://dspace.library.iitb.ac.in/xmlui/handle/10054/4395
    http://hdl.handle.net/10054/4395
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