Show simple item record

dc.contributor.authorMOHAPATRA, NRen_US
dc.contributor.authorDUTTA, Aen_US
dc.contributor.authorDESAI, MPen_US
dc.contributor.authorRAMGOPAL RAO, Ven_US
dc.date.accessioned2008-12-12T04:47:32Zen_US
dc.date.accessioned2011-11-28T09:25:09Zen_US
dc.date.accessioned2011-12-15T09:58:13Z
dc.date.available2008-12-12T04:47:32Zen_US
dc.date.available2011-11-28T09:25:09Zen_US
dc.date.available2011-12-15T09:58:13Z
dc.date.issued2001en_US
dc.identifier.citationProceedings of the Fourteenth International Conference on VLSI Design, Banglore, India, 3-7 January 2001, 479-482en_US
dc.identifier.isbn0-7695-0831-6en_US
dc.identifier.uri10.1109/ICVD.2001.902704en_US
dc.identifier.urihttp://hdl.handle.net/10054/309en_US
dc.identifier.urihttp://dspace.library.iitb.ac.in/xmlui/handle/10054/309en_US
dc.description.abstractIn this paper we look at the quantitative picture of fringing field effects by use of high-k dielectrics on the 70 nm node CMOS technologies. By using Monte-Carlo based techniques, we extract the degradation in gate-to-channel capacitance and the internal and external fringing capacitance components for varying values of K. The results clearly show the decrease in external fringing capacitance, increase in internal fringing capacitance and a slight decrease in overall capacitance, when the conventional SiO2 is replaced by high-K dielectric. From the circuit point of view the lower total capacitance will increase the speed of the device, while the internal fringing capacitance will degrade the short-channel performance contributing to higher DIBL and drain leakage.en_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectCmos Integrated Circuiten_US
dc.subjectDielectric Materialsen_US
dc.subjectMonte Carlo Methodsen_US
dc.subjectLeakage Currentsen_US
dc.titleEffect of fringing capacitances in sub 100 nm MOSFETs with high-K gate dielectricsen_US
dc.typeArticleen_US
dc.description.copyright© IEEEen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record