Dual-bit/cell SONOS flash EEPROMs: impact of channel engineering on programming speed and bit coupling effect

DSpace/Manakin Repository

Dual-bit/cell SONOS flash EEPROMs: impact of channel engineering on programming speed and bit coupling effect

Show full item record

Title: Dual-bit/cell SONOS flash EEPROMs: impact of channel engineering on programming speed and bit coupling effect
Author: DATTA, A; BHARATH KUMAR, P; MAHAPATRA, S
Abstract: Programming performance of dual-bit silicon-oxide-nitride-oxide-silicon memories is studied on cells fabricated using different channel engineering schemes. Both halo and compensation implants are shown to impact the programming speed, bit coupling, and read disturb, and can be suitably adjusted to optimize the cell operation. The doping dependence of bit coupling and the programming speed are verified using well-calibrated 2-D device simulations.
URI: http://dx.doi.org/10.1109/LED.2007.895406
http://hdl.handle.net/10054/208
http://dspace.library.iitb.ac.in/xmlui/handle/10054/208
Date: 2007


Files in this item

Files Size Format View
Dual-bit cell SONOS flash EEPROMs.pdf 105.3Kb PDF View/Open

This item appears in the following Collection(s)

Show full item record

Search DSpace


Advanced Search

Browse

My Account