| Title: | Dual-bit/cell SONOS flash EEPROMs: impact of channel engineering on programming speed and bit coupling effect |
| Author: | DATTA, A; BHARATH KUMAR, P; MAHAPATRA, S |
| Abstract: | Programming performance of dual-bit silicon-oxide-nitride-oxide-silicon memories is studied on cells fabricated using different channel engineering schemes. Both halo and compensation implants are shown to impact the programming speed, bit coupling, and read disturb, and can be suitably adjusted to optimize the cell operation. The doping dependence of bit coupling and the programming speed are verified using well-calibrated 2-D device simulations. |
| URI: |
http://dx.doi.org/10.1109/LED.2007.895406
http://hdl.handle.net/10054/208 http://dspace.library.iitb.ac.in/xmlui/handle/10054/208 |
| Date: | 2007 |
| Files | Size | Format | View |
|---|---|---|---|
| Dual-bit cell SONOS flash EEPROMs.pdf | 105.3Kb |
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