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    Dual-bit/cell SONOS flash EEPROMs: impact of channel engineering on programming speed and bit coupling effect

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    Dual-bit cell SONOS flash EEPROMs.pdf (105.3Kb)
    Date
    2007
    Author
    DATTA, A
    BHARATH KUMAR, P
    MAHAPATRA, S
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    Abstract
    Programming performance of dual-bit silicon-oxide-nitride-oxide-silicon memories is studied on cells fabricated using different channel engineering schemes. Both halo and compensation implants are shown to impact the programming speed, bit coupling, and read disturb, and can be suitably adjusted to optimize the cell operation. The doping dependence of bit coupling and the programming speed are verified using well-calibrated 2-D device simulations.
    URI
    http://dx.doi.org/10.1109/LED.2007.895406
    http://hdl.handle.net/10054/208
    http://dspace.library.iitb.ac.in/xmlui/handle/10054/208
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