Analysis of floating body effects in thin film conventional and single pocket SOI MOSFETs using the GIDL current technique

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Analysis of floating body effects in thin film conventional and single pocket SOI MOSFETs using the GIDL current technique

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Title: Analysis of floating body effects in thin film conventional and single pocket SOI MOSFETs using the GIDL current technique
Author: RAMGOPAL RAO, V; NAJEEB-UD-DIN HAKIM; DUNGA, MV; AATISH KUMAR; VASI, J; CHENG, B; WOO, JCS
Abstract: Using a novel gate-induced-drain-leakage (GIDL) current technique and two-dimensional (2-D) simulations, single pocket (SP) SOI MOSFETs have been shown to exhibit reduced floating body effects compared to the homogeneously-doped channel (conventional) SOI MOSFETs. The GIDL current technique has been used to characterize the parasitic bipolar transistor gain for both conventional and SP-SOI MOSFETs. From 2-D device simulations, the lower floating body effects in SP-SOI MOSFETs are analyzed and compared with the conventional MOSFETs.
URI: http://dx.doi.org/10.1109/55.992841
http://hdl.handle.net/10054/190
http://dspace.library.iitb.ac.in/xmlui/handle/10054/190
Date: 2002


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