Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs

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Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs

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Title: Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs
Author: MAJI, D; CRUPI, F; AMAT, E; SIMOEN, E; DE JAEGER, B; BRUNCO, DP; MANOJ, CR; RAO, VR; MAGNONE, P; GIUSI, G; PACE, C; PANTISANO, L; MITARD, J; RODRIGUEZ, R; NAFRIA, M
Abstract: In this paper, a comprehensive study of hot-carrier injection (HCI) has been performed on high-performance Si-passivated pMOSFETs with high-k metal gate fabricated on n-type germanium-on-silicon (Ge-on-Si) substrates. Negative bias temperature instability (NBTI) has also been explored on the same devices. The following are found: 1) Impact ionization rate in Ge-on-Si MOSFETs is approximately two orders higher as compared to their Si counterpart; 2) NBTI degradation is a lesser concern than HCI for Ge-on-Si pMOSFETs; and 3) increasing the Si-passivation thickness from four to eight monolayers provides a remarkable lifetime improvement.
URI: http://dx.doi.org/10.1109/TED.2009.2015854
http://dspace.library.iitb.ac.in/xmlui/handle/10054/16585
http://hdl.handle.net/10054/16585
Date: 2009


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