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dc.contributor.authorGOPALAKRISHNAN, Nen_US
dc.contributor.authorBALAKRISHNAN, Len_US
dc.contributor.authorSRIMATHY, Ben_US
dc.contributor.authorKUMAR, MSen_US
dc.contributor.authorBALASUBRAMANIAN, Ten_US
dc.date.accessioned2011-09-01T23:02:45Zen_US
dc.date.accessioned2011-12-26T12:59:49Zen_US
dc.date.accessioned2011-12-27T05:52:47Z
dc.date.available2011-09-01T23:02:45Zen_US
dc.date.available2011-12-26T12:59:49Zen_US
dc.date.available2011-12-27T05:52:47Z
dc.date.issued2010en_US
dc.identifier.citationPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 207(9), 2180-2184en_US
dc.identifier.issn1862-6300en_US
dc.identifier.urihttp://dx.doi.org/10.1002/pssa.201026038en_US
dc.identifier.urihttp://dspace.library.iitb.ac.in/xmlui/handle/10054/12888en_US
dc.identifier.urihttp://hdl.handle.net/10054/12888
dc.description.abstractThe effect of oxygen vacancies on ferromagnetism (FM) in Zn(1-x)Mn(x)O thin films grown by radio frequency (RF) sputtering has been investigated. The grown films at different oxygen pressures have been characterized by X-ray diffraction (XRD), Hall effect, photoluminescence (PL) and vibrating sample magnetometry (VSM). The observed ferromagnetism/diamagnetism by the VSM measurement due to the variation of oxygen vacancies has been confirmed by XRD, PL, and Hall results. The vacancy-mediated FM has been explained by the formation of magnetic polarons. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.language.isoenen_US
dc.publisherWILEY-V C H VERLAG GMBHen_US
dc.subjectMn-Doped Znoen_US
dc.subjectMagnetic Semiconductorsen_US
dc.subjectElectronic-Structureen_US
dc.subject.otherZnoen_US
dc.subject.otherDopingen_US
dc.subject.otherManganeseen_US
dc.subject.otherFerromagnetismen_US
dc.subject.otherVacanciesen_US
dc.subject.otherSputteringen_US
dc.titleVacancy-mediated room-temperature ferromagnetism in Zn(1-x)Mn(x)O thin filmsen_US
dc.typeArticleen_US


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