Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si3N4 MNSFETs

DSpace/Manakin Repository

Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si3N4 MNSFETs

Show full item record

Title: Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si3N4 MNSFETs
Author: MAHAPATRA, S; RAMGOPAL RAO, V; CHENG, B; KHARE, M; PARIKH, CD; WOO, JCS; VASI, J
Abstract: Metal-nitride-semiconductor FETs (MNSFETs) having channel lengths down to 100 mm and a novel jet vapor deposited (JVD) Si3N4 gate dielectric have been fabricated and characterized. When compared with MOSFETs having a thermal SiO2 gate insulator, the MNSFETs show a comparable drain current drive, transconductance, subthreshold slope and pre-stress interface quality. A novel charge pumping technique is employed to characterize the hot-carrier induced interface-trap generation in MNSFETs and MOSFETs. Under identical substrate current during stress, MNSFETs show less interface-state generation and drain current degradation, for various channel lengths, stress times and supply voltages, despite the fact that the Si-Si3N4 barrier (2.1 eV) is lower than the Si-SiO2 barrier (3.1 eV). The time and voltage dependence of hot-carrier degradation has been found to be distinctly different for MNSFETs compared to SiO2 MOSFETs.
URI: http://dx.doi.org/10.1109/16.915686
http://hdl.handle.net/10054/118
http://dspace.library.iitb.ac.in/xmlui/handle/10054/118
Date: 2001


Files in this item

Files Size Format View
19781 138.6Kb Unknown View/Open

This item appears in the following Collection(s)

Show full item record

Search DSpace


Advanced Search

Browse

My Account