Now showing items 1-4 of 4

    • Chemical treatment of photoluminescent porous silicon 

      VADJIKAR, RM; JAIN, B; GUPTA, PK; NANDEDKAR, RV; BHAWALKAR, DD; PATNI, MJ; SRINIVASA, R; CHANDORKAR, AN (ELSEVIER SCIENCE SA LAUSANNE, 1994)
      Porous silicon layers formed by electrochemical anodizing show photoluminescence in the visible region. We report on the effect of chemical treatments such as hydrofluoric acid dip, ammonium fluoride solution treatment and ...
    • COMPUTATIONAL MODELING OF NANOSTRUCTURED POROUS SILICON 

      VADJIKAR, RM; CHANDORKAR, AN; SHARMA, D; VENKATACHALAM, S (PERGAMON-ELSEVIER SCIENCE LTD, 1995)
      The finite diffusion length model generates patterns which are similar to the nanostructural features in porous silicon formed by electrochemical anodizing. The simulated patterns have a neatly constant density away from ...
    • Formation and growth of porous silicon 

      VADJIKAR, RM; NATH, AK; CHANDORKAR, AN (PERGAMON-ELSEVIER SCIENCE LTD, 1997)
      The conformal hullfinite diffusion length model (FDL) simulates pore formation and growth in silicon by launching particles from an isoconcentration profile. Several features of the aggregation patterns generated by this ...
    • MORPHOLOGY OF SELF-SUPPORTING POROUS SILICON LAYERS 

      VADJIKAR, RM; NANDEDKAR, RV; BHAWALKAR, DD; VENKETACHALAM, S; DUSSANI, A; CHANDORKAR, AN (CHAPMAN HALL LTD, 1994)