Now showing items 1-13 of 13

    • HI-ERDA, Micro-Raman and HRXRD studies of buried silicon oxynitride layers synthesized by dual ion implantation 

      POLJI, RH; YADAV, AD; DUBEY, SK; KHAN, SA; AVASTHI, DK; RAO, TKG (PERGAMON-ELSEVIER SCIENCE LTD, 2009)
      Silicon oxynitride (Si(x)O(y)N(z)) buried insulating layers were synthesized by dual implantation of nitrogen ((14)N(+)) and oxygen ((16)O(+)) ions sequentially into single crystal silicon in the ratio 1:1 at 150 keV to ...
    • High-energy ion implantation of iron in silicon 

      BHOLE, KG; KAMALAPURKAR, BA; DUBEY, SK; YADAV, AD; RAO, TKG; MOHANTI, T; KANJILAL, D (ELSEVIER SCIENCE BV, 2003)
      Seventy MeV, Fe-56(5+) ion implantation into p-type silicon with different doses varying from 1 x 10(12) to 5 x 10(14) ions cm(-2) has been investigated by Fourier transform infrared (FT/IR) reflectivity and low temperature ...
    • Investigation of 70 MeV iron irradiation induced defects in C-silicon 

      KAMALAPURKAR, BA; DUBEY, SK; YADAV, AD; BHOLE, KG; CHANDRASHEKARAN, KS; RAO, TKG; MOHANTI, T; KANJILAL, D (ELSEVIER SCIENCE BV, 2003)
      Single crystal p-type silicon wafers of 0.05 Omegacm resistivity and <1 1 1> orientation were irradiated with 70 MeV Fe-56 ions at fluence levels varying from 5 x 10(12) to 5 x 10(14) ions cm(-2). The high-resolution X-ray ...
    • Investigation of defects in reactive ion-implanted silicon 

      BHATT, G; YADAV, AD; DUBEY, SK; RAO, TKG (ELSEVIER SCIENCE BV, 2004)
      The reactive ion implantation in silicon at different fluence levels varying from 5 x 10(16) to 1 x 10(18) ions cm(-2) was carried out at 30 keV to synthesize silicon dioxide (SiO2), silicon nitride (Si3N4) and silicon ...
    • Investigations of nano size defects in InP induced by swift iron ions 

      DUBEY, RL; DUBEY, SK; YADAV, AD; GUPTA, SJ; PANDEY, SD; RAO, TKG; MOHANTY, T; KANJILAL, D (ELSEVIER SCIENCE BV, 2007)
      Indium phosphide (InP) samples were irradiated with swift (100 MeV) Fe-56(7+) ions with different fluences varying from 5 x 10(12) to 2 x 10(14) cm(-2) at room temperature. Atomic force microscopy (AFM) and high resolution ...
    • Structural and electrical properties of high dose nitrogen implanted tantalum 

      YADAV, AD; DUBEY, SK; GUPTA, GK; RAO, TKG (GORDON BREACH SCI PUBL LTD, 2000)
      High purity tantalum foils were implanted with 20 keV molecular nitrogen ions at dose levels varying from 5 x 10(16) to 1 x 10(18) N-2(+) cm(-2). The Fourier Transform Infrared (FTIR) spectra of the implanted layers show ...
    • Structural studies of 20 keV oxygen-implanted silicon 

      GUPTA, GK; YADAV, AD; RAO, TKG; DUBEY, SK (ELSEVIER SCIENCE BV, 2000)
      Silicon wafers were implanted with 20 keV O-2(+) up to total fluence of 1 x 10(18) O-2(+) cm(-2) to synthesize SiO2 layers. The FTIR, ESR and C-V studies of as-implanted samples and samples nitrogen-annealed at 500 degrees ...
    • Structural studies of silicon oxynitride layers formed by low energy ion implantation 

      CHAUHAN, AR; YADAV, AD; DUBEY, SK; RAO, TKG (ELSEVIER SCIENCE BV, 2008)
      Silicon oxynitride (Si(x)O(y)N(z)) layers were synthesized by implanting (16)O(2)(+) and (14)N(2)(+) 30 keV ions in 1:1 ratio with fluences ranging from 5 x 10(16) to 1 x 10(18) ions cm(-2) into single crystal silicon at ...
    • Studies of defects and annealing behavior of silicon irradiated with 70 MeV Fe-56 ions 

      DUBEY, SK; YADAV, AD; KAMALAPURKAR, BK; RAO, TKG; GOKHALE, M; MOHANTY, T; KANJILAL, D (ELSEVIER SCIENCE BV, 2006)
      The effects of 70 MeV irradiation of iron ions in p-type silicon at fluences between 1 x 10(12) and 5 x 10(14) ions cm(-2) were investigated by high resolution X-ray diffraction (HRXRD), electron spin resonance (ESR) and ...
    • Study of optical properties of swift heavy ion irradiated gallium antimonide 

      DUBEY, SK; DUBEY, RL; YADAV, AD; JADHAV V; RAO, TKG; MOHANTY, T; KANJILAL, D (ELSEVIER SCIENCE BV, 2006)
      Gallium antimonide (GaSb) which is a narrow band gap compound semiconductor has received attention because of its potential applications in optoelectronic devices. In the present work, p-type GaSb wafers of < 100 > orientation ...
    • Study of swift (100 MeV) Fe9+ ion irradiated gallium antimonide 

      JADHAV, V; DUBEY, SK; DUBEY, RL; TRIPATHI, S; YADAV, AD; GUPTA, SJ; RAO, TKG; KANJILAL, D (ELSEVIER SCIENCE BV, 2008)
      The effect of 100 MeV irradiation of iron ions in p-type gallium antimonide for ion fluences varying from 1 x 10(11) to 5 x 10(13) cm(-2) was investigated using Raman scattering, Fourier transform infrared and X-ray ...
    • Synthesis of buried silicon oxynitride layers by ion implantation for silicon-on-insulator (SOI) structures 

      YADAV, AD; POJI, RH; SINGH, V; DUBEY, SK; RAO, TKG (ELSEVIER SCIENCE BV, 2006)
      Silicon oxynitride (Si(x)O(y)Nz) buried insulating layers were synthesized by SIMNOX (separation by implanted nitrogen-oxygen) process by N-14(+) and O-16(+) ion implantation to high fluence levels 1 x 10(17), 2.5 x 10(17) ...
    • Synthesis of silicon oxynitride layers by dual ion-implantation and their annealing behaviour 

      CHAUHAN, AR; BHATT, G; YADAV, AD; DUBEY, SK; RAO, TKG (ELSEVIER SCIENCE BV, 2003)
      Single crystal n-type silicon samples were implanted at room temperature sequentially by molecular oxygen ((16)O(2)(+)) and nitrogen ((14)N(2)(+)) in different proportions to high fluence levels ranging from 5 x 10(16) to ...