Now showing items 7988-8007 of 20782

    • Growth of CdS nanocrystallites on graphene oxide Langmuir-Blodgett monolayers 

      NARAYANAM, PK; SINGH, G; BOTCHA, VD; SUTAR, DS; TALWAR, SS; SRINIVASA, RS; MAJOR, SS (IOP PUBLISHING LTD, 2012)
      Large area GO-Cd composite Langmuir-Blodgett monolayers were transferred onto Si substrate by introducing Cd2+ ions into the subphase. The changes in the behaviour of the Langmuir monolayer isotherm in the presence of Cd2+ ...
    • Growth of GaN films by reactive sputtering of GaAs 

      PRESCHILLA, NA; ELKASHEF, NM; SRINIVASA, RS; MAJOR, S (ELSEVIER SCIENCE SA, 1998)
      GaN films were deposited by the reactive sputtering of GaAs target using 100% nitrogen as the sputtering and reactive gas at substrate temperatures ranging from 673 to 873 K. The films were studied using XRD and XPS ...
    • Growth of Hilbert coefficients of Syzygy modules 

      PUTHENPURAKAL, TJ (ACADEMIC PRESS INC ELSEVIER SCIENCE, 2017)
      Let (A, m) be a local complete intersection ring of dimension d and let I be an m-primary ideal. Let M be a maximal Cohen-Macaulay A-module. For i = 0,1, ... , d, let e(i)(I)(M) denote the ith Hilbert -coefficient of M ...
    • Growth of Long Range Forward-Backward Multiplicity Correlations with Centrality in Au plus Au Collisions at root s(NN)=200 GeV 

      ABELEV, BI; AGGARWAL, MM; AHAMMED, Z; ANDERSON, BD; ARKHIPKIN, D; AVERICHEV, GS; BALEWSKI, J; BARANNIKOVA, O; BARNBY, LS; BAUDOT, J; BAUMGART, S; BEAVIS, DR; BELLWIED, R; BENEDOSSO, F; BETANCOURT, MJ; BETTS, RR; BHASIN, A; BHATI, AK; BICHSEL, H; BIELCIK, J; BIELCIKOVA, J; BIRITZ, B; BLAND, LC; BOMBARA, M; BONNER, BE; BOTJE, M; BOUCHET, J; BRAIDOT, E; BRANDIN, AV; BRUNA, E; BUELTMANN, S; BURTON, TP; BYSTERSKY, M; CAI, XZ; CAINES, H; SANCHEZ, MCD; CATU, O; CEBRA, D; CENDEJAS, R; CERVANTES, MC; CHAJECKI, Z; CHALOUPKA, P; CHATTOPADHYAY, S; CHEN, HF; CHEN, JH; CHEN, JY; CHENG, J; CHERNEY, M; CHIKANIAN, A; CHOI, KE; CHRISTIE, W; CLARKE, RF; CODRINGTON, MJM; CORLISS, R; CORMIER, TM; COSENTINO, MR; CRAMER, JG; CRAWFORD, HJ; DAS, D; DASH, S; DAUGHERITY, M; DE SILVA, LC; DEDOVICH, TG; DEPHILLIPS, M; DEREVSCHIKOV, AA; DE SOUZA, RD; DIDENKO, L; DJAWOTHO, P; DOGRA, SM; DONG, X; DRACHENBERG, JL; DRAPER, JE; DU, F; DUNLOP, JC; MAZUMDAR, MRD; EDWARDS, WR; EFIMOV, LG; ELHALHULI, E; ELNIMR, M; EMELIANOV, V; ENGELAGE, J; EPPLEY, G; ERAZMUS, B; ESTIENNE, M; EUN, L; FACHINI, P; FATEMI, R; FEDORISIN, J; FENG, A; FILIP, P; FINCH, E; FINE, V; FISYAK, Y; GAGLIARDI, CA; GAILLARD, L; GANGADHARAN, DR; GANTI, MS; GARCIA-SOLIS, EJ; GEROMITSOS, A; GEURTS, F; GHAZIKHANIAN, V; GHOSH, P; GORBUNOV, YN; GORDON, A; GREBENYUK, O; GROSNICK, D; GRUBE, B; GUERTIN, SM; GUIMARAES, KSFF; GUPTA, A; GUPTA, N; GURYN, W; HAAG, B; HALLMAN, TJ; HAMED, A; HARRIS, JW; HE, W; HEINZ, M; HEPPELMANN, S; HIPPOLYTE, B; HIRSCH, A; HJORT, E; HOFFMAN, AM; HOFFMANN, GW; HOFMAN, DJ; HOLLIS, RS; HUANG, HZ; HUMANIC, TJ; HUO, L; IGO, G; IORDANOVA, A; JACOBS, P; JACOBS, WW; JAKL, P; JENA, C; JIN, F; JONES, CL; JONES, PG; JOSEPH, J; JUDD, EG; KABANA, S; KAJIMOTO, K; KANG, K; KAPITAN, J; KEANE, D; KECHECHYAN, A; KETTLER, D; KHODYREV, VY; KIKOLA, DP; KIRYLUK, J; KISIEL, A; KNOSPE, AG; KOCOLOSKI, A; KOETKE, DD; KOPYTINE, M; KORSCH, W; KOTCHENDA, L; KOUCHPIL, V; KRAVTSOV, P; KRAVTSOV, VI; KRUEGER, K; KRUS, M; KUHN, C; KUMAR, L; KURNADI, P; LAMONT, MAC; LANDGRAF, JM; LAPOINTE, S; LAURET, J; LEBEDEV, A; LEDNICKY, R; LEE, CH; LEE, JH; LEIGHT, W; LEVINE, MJ; LI, N; LI, C; LI, Y; LIN, G; LINDENBAUM, SJ; LISA, MA; LIU, F; LIU, J; LIU, L; LJUBICIC, T; LLOPE, WJ; LONGACRE, RS; LOVE, WA; LU, Y; LUDLAM, T; MA, GL; MA, YG; MAHAPATRA, DP; MAJKA, R; MALL, OI; MANGOTRA, LK; MANWEILER, R; MARGETIS, S; MARKERT, C; MATIS, HS; MATULENKO, YA; MCSHANE, TS; MESCHANIN, A; MILNER, R; MINAEV, NG; MIODUSZEWSKI, S; MISCHKE, A; MITCHELL, J; MOHANTY, B; MOROZOV, DA; MUNHOZ, MG; NANDI, BK; NATTRASS, C; NAYAK, TK; NELSON, JM; NETRAKANTI, PK; NG, MJ; NOGACH, LV; NURUSHEV, SB; ODYNIEC, G; OGAWA, A; OKADA, H; OKOROKOV, V; OLSON, D; PACHR, M; PAGE, BS; PAL, SK; PANDIT, Y; PANEBRATSEV, Y; PAWLAK, T; PEITZMANN, T; PEREVOZTCHIKOV, V; PERKINS, C; PERYT, W; PHATAK, SC; PLANINIC, M; PLUTA, J; POLJAK, N; POSKANZER, AM; POTUKUCHI, BVKS; PRINDLE, D; PRUNEAU, C; PRUTHI, NK; PUJAHARI, PR; PUTSCHKE, J; RANIWALA, R; RANIWALA, S; REDWINE, R; REED, R; RIDIGER, A; RITTER, HG; ROBERTS, JB; ROGACHEVSKIY, OV; ROMERO, JL; ROSE, A; ROY, C; RUAN, L; RUSSCHER, MJ; SAHOO, R; SAKREJDA, I; SAKUMA, T; SALUR, S; SANDWEISS, J; SARSOUR, M; SCHAMBACH, J; SCHARENBERG, RP; SCHMITZ, N; SEGER, J; SELYUZHENKOV, I; SEYBOTH, P; SHABETAI, A; SHAHALIEV, E; SHAO, M; SHARMA, M; SHI, SS; SHI, XH; SICHTERMANN, EP; SIMON, F; SINGARAJU, RN; SKOBY, MJ; SMIRNOV, N; SNELLINGS, R; SORENSEN, P; SOWINSKI, J; SPINKA, HM; SRIVASTAVA, B; STADNIK, A; STANISLAUS, TDS; STASZAK, D; STRIKHANOV, M; STRINGFELLOW, B; SUAIDE, AAP; SUAREZ, MC; SUBBA, NL; SUMBERA, M; SUN, XM; SUN, Y; SUN, Z; SURROW, B; SYMONS, TJM; DE TOLEDO, AS; TAKAHASHI, J; TANG, AH; TANG, Z; TARNOWSKY, T; THEIN, D; THOMAS, JH; TIAN, J; TIMMINS, AR; TIMOSHENKO, S; TLUSTY, D; TOKAREV, M; TRAM, VN; TRATTNER, AL; TRENTALANGE, S; TRIBBLE, RE; TSAI, OD; ULERY, J; ULLRICH, T; UNDERWOOD, DG; VAN BUREN, G; VAN LEEUWEN, M; MOLEN, AMV; VANFOSSEN, JA; VARMA, R; VASCONCELOS, GMS; VASILEVSKI, IM; VASILIEV, AN; VIDEBAEK, F; VIGDOR, SE; VIYOGI, YP; VOKAL, S; VOLOSHIN, SA; WADA, M; WALKER, M; WANG, F; WANG, G; WANG, JS; WANG, Q; WANG, X; WANG, XL; WANG, Y; WEBB, G; WEBB, JC; WESTFALL, GD; WHITTEN, C; WIEMAN, H; WISSINK, SW; WITT, R; WU, Y; XIE, W; XU, N; XU, QH; XU, Y; XU, Z; YANG, Y; YEPES, P; YOO, IK; YUE, Q; ZAWISZA, M; ZBROSZCZYK, H; ZHAN, W; ZHANG, S; ZHANG, WM; ZHANG, XP; ZHANG, Y; ZHANG, ZP; ZHAO, Y; ZHONG, C; ZHOU, J; ZOULKARNEEV, R; ZOULKARNEEVA, Y; ZUO, JX (AMER PHYSICAL SOC, 2009)
      Forward-backward multiplicity correlation strengths have been measured with the STAR detector for Au + Au and p + p collisions at root s(NN) = 200 GeV. Strong short- and long-range correlations (LRC) are seen in central ...
    • Growth of pseudocubic perovskite-type SrRuO3 thin films on quartz substrate using pulsed laser deposition method 

      DARYAPURKAR, AS; KOLTE, JT; GOPALAN, P (SPRINGER, 2013)
      Strontium ruthenium oxide (SrRuO3) thin films have been grown using pulsed laser deposition technique on silicon, Pt coated silicon and quartz substrates. The effect of substrate temperatures on the structural, microstructure, ...
    • Growth of silicon nitride by nitridation of amorphous silicon at low temperature in hot-wire CVD 

      RAI, DK; SOLANKI, CS; KAVAIPATTI, BR (ELSEVIER SCI LTD, 2017)
      Silicon nitride.(SiNx) layers of varying thickness were fabricated in a a-Si/SiNx/a-Si heterostructure via nitridation of the bottom a-Si layer, using ammonia (NH3) gas, in the hot-wire chemical vapor deposition (HWCVD) ...
    • Growth of sinuous waves on thin liquid sheets: Comparison of predictions with experiments 

      MAJUMDAR, N; TIRUMKUDULU, MS (AMER INST PHYSICS, 2016)
      A recent theory [M. S. Tirumkudulu and M. Paramati, "Stability of a moving radial liquid sheet: Time dependent equations," Phys. Fluids 25(10), 102-107 (2013)] has shown that a radially expanding liquid sheet is unstable ...
    • Growth of strained ZnSe layers on GaAs substrates by pulsed laser deposition carried out in an off-axis deposition geometry 

      GANGULI, T; PORWAL, S; SHARMA, T; INGALE, A; KUMAR, S; TIWARI, P; BALAMURUGAN, AK; RAJAGOPALAN, S; TYAGI, AK; CHANDRASEKARAN, KS; ARORA, BM; RUSTAGI, KC (ELSEVIER SCIENCE SA, 2007)
      We have deposited thin layers of ZnSe on (001) oriented GaAs substrates by pulsed laser deposition at different incident laser fluence (referred to as normal geometry) and in an off-axis geometry where the plasma plume ...
    • Growth of textured nanocrystalline cobalt ferrite thin films by pulsed laser deposition 

      ADITYA, L; SRIVASTAVA, A; SAHOO, SK; DAS, P; MUKHERJEE, C; MISRA, A; REDDY, VR; SHINDE, RS; GUPTA, A; PRASAD, S; SAMAJDAR, I; NANDEDKAR, RV; VENKATARAMANI, N (AMER SCIENTIFIC PUBLISHERS, 2008)
      Cobalt ferrite thin films have been deposited on fused quartz substrates by pulsed laser deposition at various substrate temperatures, T-S (25 degrees C, 300 degrees C, 550 degrees C and 750 degrees C). Single phase, ...
    • Growth, characterization, vortex pinning, and vortex flow properties of single crystals of the iron chalcogenide superconductor FeCr0.02Se 

      YADAV, AK; THAKUR, AD; TOMY, CV (AMER PHYSICAL SOC, 2013)
      We report on the growth and characterization of single crystals of the iron chalcogenide superconductor FeCr0.02Se. There is an enhancement of the superconducting transition temperature (T-c) as compared to the T-c of the ...
    • Growth, optical transmission and X-ray photoemission studies of BaB2O4 single crystals 

      SABHARWAL, SC; SANGEETA; GOSWAMI, M; KULKARNI, SK; PADALIA, BD (KLUWER ACADEMIC PUBL, 2000)
      Beta barium borate (beta-BBO) crystals have been grown by the top seeded solution growth technique (TSSG) using Na2O as a flux. The crystals exhibited high transparency and the absence of inclusions and found to have sodium ...
    • GROWTH-KINETICS OF SILICON DIOXIDE ON SILICON IN AN INDUCTIVELY COUPLED RF PLASMA AT CONSTANT ANODIZATION CURRENTS 

      CHOKSI, AJ; LAL, R; CHANDORKAR, AN (AMER INST PHYSICS, 1992)
      The kinetics of plasma oxidation of silicon at constant anodization current have been investigated. Oxidation was performed in an inductively coupled rf plasma anodization setup. The oxidation model is based on the assumption ...
    • GROWTH-RATE DISPERSION IN MSMPR CRYSTALLIZERS - SOLUTION BY REGULARIZATION 

      GUPTA, V; BHATIA, SK (PERGAMON-ELSEVIER SCIENCE LTD, 1993)
      An inverse problem approach is formulated for the determination of growth rate dispersion from measurement of size distribution of crystals in mixed-suspension mixed-product removal crystallizers. The resulting Fredholm ...
    • Growth-related model of the GAL system in Saccharomyces cerevisiae predicts behaviour of several mutant strains 

      PANNALA, VR; HAZARIKA, SJ; BHAT, PJ; BHARTIYA, S; VENKATESH, KV (INST ENGINEERING TECHNOLOGY-IET, 2012)
      The genetic regulatory network responds dynamically to perturbations in the intracellular and extracellular environments of an organism. The GAL system in the yeast Saccharomyces cerevisiae has evolved to utilise galactose ...
    • GSR and HRV : its application in clinical diagnosis 

      AHUJA, ND (IEEE COMPUTER SOC, 2003)
      Galvanic skin response is a method of regulating the internal physical process by giving a biofeedback, which is effective in the treatment of phobias, anxiety and to increase the relaxation process of the subject during ...
    • GTP Regulates the Interaction between MciZ and FtsZ: A Possible Role of MciZ in Bacterial Cell Division 

      RAY, S; KUMAR, A; PANDA, D (AMER CHEMICAL SOC, 2013)
      MciZ, a peptide with 40 amino acid residues, has been shown to be expressed during bacterial sporulation, to inhibit Z-ring formation in bacteria, and to inhibit the assembly of FtsZ in vitro. Here, MciZ was found to bind ...
    • Guest editorial: information and communications technology for development 

      PARTHASARATHY, B; RAMAMRITHAM, K (SPRINGER, 2009)
    • Guest Editorial: Special Section on Nano Devices, Circuits and Systems 

      RAO, VR; SARKAR, CK; NIRMAL, D; KUMAR, M (IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2017)
    • Guest editors' introduction: special section on mining and searching the web 

      LIU, B; CHAKRABARTI, S (IEEE COMPUTER SOC, 2004)