Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/xmlui/handle/123456789/22120
Title: Impact of Post-deposition Plasma Treatment on Surface Passivation Quality of Silicon Nitride Films
Authors: SASEENDRAN, SS
RAVAL, MC
KOTTANTHARAYIL, A
Keywords: Solar-Cells
Efficiency
Issue Date: 2016
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: IEEE JOURNAL OF PHOTOVOLTAICS,6(1)74-78
Abstract: Exposing a plasma-enhanced chemical vapor deposition-deposited silicon nitride (SiNx) film to an inert gas-oxidizing plasma ambient results in a significant reduction in background plating in the case of electroplated Ni-Cu metallization on c-Si solar cells. However, plasma treatment of SiNx is known to result in a degradation of the Si-SiNx interface. In this paper, we investigate the impact of an Ar/N2O plasma treatment process on the surface passivation properties of SiNx film. Following the plasma treatment, effective minority carrier lifetime (tau(eff)) is seen to improve from 266 to 864 mu s at a minority carrier density of 10(15) cm(-3). The interface-state density (D-it) at the Si-SiNx interface also decreases by an order of magnitude, following the Ar/N2O plasma treatment. Enhancement in tau(eff) is found to be stable for annealing temperatures up to 450 degrees C, which is typically used for Ni-Cu contact sintering. Substrate annealing during the post-deposition plasma treatment process is seen to play a major role in improving the tau(eff). Coupled with its potential for reducing the background plating, the proposed process is a promising candidate for developing the passivation layers for cell technologies with low-temperature metallization schemes.
URI: http://dx.doi.org/10.1109/JPHOTOV.2015.2493369
http://localhost:8080/xmlui/handle/123456789/22120
ISSN: 2156-3381
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