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|Title:||Delamination/Rupture of Polycrystalline Diamond Film: Defining Role of Shear Anisotropy|
|Publisher:||AMER CHEMICAL SOC|
|Citation:||CRYSTAL GROWTH & DESIGN,17(4)1514-1523|
|Abstract:||Polycrystalline diamond films were synthesized, by microwave plasma chemical vapor deposition. Films were mechanically stable until 30 mu m thickness, while further deposition led to catastrophic film delamination and rupture. This coincided with fracture of the single-crystal silicon substrate, creating polycrystalline silicon with clear shear markings. Films grown to 12, 18, 21, and 30 mu m were subjected to detailed investigations. Larger film thickness modified intrinsic stresses (estimated from Raman shift) from mildly compressive to strongly tensile. However, normal in-plane residual stresses and dislocation densities, as estimated from X-ray diffraction, dropped. Film growth enhanced anisotropies in crystallographic texture brought changes to grain morphology and significantly increased out-of-plane residual shear stress. Though different models of film delamination/rupture were deliberated, they fail to assimilate all aspects of experimental observations. Shear anisotropy-induced lateral stresses, on the other hand, can explain film rupture and relate the same with substrate/film microstructural developments.|
|Appears in Collections:||Article|
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