Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/xmlui/handle/123456789/19455
Title: Growth of silicon nitride by nitridation of amorphous silicon at low temperature in hot-wire CVD
Authors: RAI, DK
SOLANKI, CS
KAVAIPATTI, BR
Keywords: Chemical-Vapor-Deposition
Ray Photoelectron-Spectroscopy
Thin-Films
Electronic-Structure
Hydrogen Effusion
Raman-Spectra
Local Order
A-Sinx
Nitrogen
Plasma
Issue Date: 2017
Publisher: ELSEVIER SCI LTD
Citation: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,67,46-54
Abstract: Silicon nitride.(SiNx) layers of varying thickness were fabricated in a a-Si/SiNx/a-Si heterostructure via nitridation of the bottom a-Si layer, using ammonia (NH3) gas, in the hot-wire chemical vapor deposition (HWCVD) chaniber at 250 degrees C. The thickness of the SiNx in the film was varied by changing the nitridation time (t(N)) in range of 1-30 min. Raman analysis showed that the a-Si and SiNx layers formed in the films were amorphous. Fourier transform infrared (FTIR) and X-ray photoelectron spectroscopy (XPS) results indicated Si3N4 was formed in the nitrided a-Si. Presence of strong SiH2 (2086 cm(-1)) peaks in the FTIR spectrum suggested the hydrogen in a-Si effused at 250 degrees C. XPS Si2p spectra and high resolution transmission electron microscopy images showed thin SiNx layer of thickness 1.8-7.6 nm was formed. Formation of SiNx thicker than 7.6 run even at a low temperature (250 degrees C) is suggestive of the H effusion promoting both the reaction and the diffusion of the nitridants in a-Si. The kinetics of the growth of SiNx during nitridation of the a-Si layer closely matches the growth process described by diffusion model, wherein the reaction of nitridants and a-Si is controlled by diffusion in the SiNx layer formed.
URI: http://dx.doi.org/10.1016/j.mssp.2017.05.015
http://localhost:8080/xmlui/handle/123456789/19455
ISSN: 1369-8001
1873-4081
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