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|Title: ||Further insights into the mechanism of hydrogen-plasma surface passivation of low-dielectric constant hydrogen silsesquioxane (HSQ)|
|Authors: ||SINGH, SK|
|Issue Date: ||2006|
|Publisher: ||KOREAN PHYSICAL SOC|
|Citation: ||JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 49(3), 1312-1316|
|Abstract: ||Hydrogen-plasma-induced surface modification of spin-on hydrogen silsesquioxane (HSQ) thin films has been studied with a view to understand the various physical and chemical aspects of the process. An extensive characterization of the chemical structure, the surface topography and the surface wettability has been carried out. A copper diffusion study has also been done by employing secondary ion mass spectrometry. The results give new insights into the mechanism of the observed decrease in the leakage current of the HSQ films after hydrogen plasma treatment.|
|Appears in Collections:||Article|
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