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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/9847

Title: Further insights into the mechanism of hydrogen-plasma surface passivation of low-dielectric constant hydrogen silsesquioxane (HSQ)
Authors: SINGH, SK
KUMBHAR, AA
DUSANE, RO
BOCK, W
Keywords: chemical-vapor-deposition
induced damage
films
Issue Date: 2006
Publisher: KOREAN PHYSICAL SOC
Citation: JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 49(3), 1312-1316
Abstract: Hydrogen-plasma-induced surface modification of spin-on hydrogen silsesquioxane (HSQ) thin films has been studied with a view to understand the various physical and chemical aspects of the process. An extensive characterization of the chemical structure, the surface topography and the surface wettability has been carried out. A copper diffusion study has also been done by employing secondary ion mass spectrometry. The results give new insights into the mechanism of the observed decrease in the leakage current of the HSQ films after hydrogen plasma treatment.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/9847
http://hdl.handle.net/10054/9847
ISSN: 0374-4884
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