DSpace at IIT Bombay >
IITB Publications >
Please use this identifier to cite or link to this item:
|Title: ||Dielectric Properties of La(3+) at A Site and Al(3+) and Ga(3+) Doped at B Site in BaTiO(3)|
|Authors: ||BOBADE, SM|
|Issue Date: ||2009|
|Publisher: ||JAPAN SOC APPLIED PHYSICS|
|Citation: ||JAPANESE JOURNAL OF APPLIED PHYSICS, 48(4), -|
|Abstract: ||In this investigation, the A- and B-site doped BaTiO(3) have been investigated. The extremely small concentration of dopant concentration (La(3+)) at A site with formula Ba((1-3x))La(2x)TiO(3) and (Al(3+), Ga(3+)) B site with formula BaTi((1-3x)) Al(4x)O(3) and BaTi((1-3x))Ga(4x)O(3) have been probed using X-ray diffraction (XRD), impedance spectroscopy dielectric spectroscopy, and differential scanning calorimetry (DSC). The dielectric behavior of doped BaTiO(3) has been studied in the temperature range 40 to 200 degrees C. It has been observed that as La(3+) concentration varies from 0.004 to 0.012, the transition temperature La(3+) doped BaTiO(3) decrease. In case of Al(3+)/La(3+)/Ga(3+). The coductivity of doped BaTiO has been reported in the temperature range 500 to 300 degrees C. The activation energies for Al(3+) and Ga(3+) doped BaTiO(3) (x = 0.006) are 0.32 and 0.43 eV, respectively. The types of defects in BaTiO(3) have been analyzed on the basis of conductivity data. (c) 2009|
|Appears in Collections:||Article|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.