DSpace
 

DSpace at IIT Bombay >
IITB Publications >
Article >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/9223

Title: Vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin spacer layer
Authors: CHAKRABARTI, S
HALDER, N
SENGUPTA, S
GHOSH, S
MISHIMA, TD
STANLEY, CR
Keywords: inas
temperature
growth
gaas
Issue Date: 2008
Publisher: IOP PUBLISHING LTD
Citation: NANOTECHNOLOGY, 19(50), -
Abstract: The vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin (7-9 nm) spacer layer has been investigated by transmission electron microscopy and photoluminescence measurements. The nanoscale dots are grown by molecular beam epitaxy (MBE) at 0.028 ML s(-1) growth rate. The active dots having higher monolayer coverages showed reduced ordering due to local strain at the growth surface. Also the active dots with increased monolayer coverage is a probable cause of tunneling-assisted carrier transfer between the dot layers.
URI: http://dx.doi.org/10.1088/0957-4484/19/50/505704
http://dspace.library.iitb.ac.in/xmlui/handle/10054/9223
http://hdl.handle.net/10054/9223
ISSN: 0957-4484
Appears in Collections:Article

Files in This Item:

There are no files associated with this item.

View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback