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|Title: ||Vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin spacer layer|
|Authors: ||CHAKRABARTI, S|
|Issue Date: ||2008|
|Publisher: ||IOP PUBLISHING LTD|
|Citation: ||NANOTECHNOLOGY, 19(50), -|
|Abstract: ||The vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin (7-9 nm) spacer layer has been investigated by transmission electron microscopy and photoluminescence measurements. The nanoscale dots are grown by molecular beam epitaxy (MBE) at 0.028 ML s(-1) growth rate. The active dots having higher monolayer coverages showed reduced ordering due to local strain at the growth surface. Also the active dots with increased monolayer coverage is a probable cause of tunneling-assisted carrier transfer between the dot layers.|
|Appears in Collections:||Article|
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