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|Title:||Multiferroic Bi(0.7)Dy(0.3)FeO(3) films as high k dielectric material for advanced non-volatile memory devices|
|Publisher:||INST ENGINEERING TECHNOLOGY-IET|
|Citation:||ELECTRONICS LETTERS, 45(16), 821-U27|
|Abstract:||Gate dielectric materials having high dielectric constant, low interface state density and good thermal stability are needed for advanced CMOS applications. In this Letter, the electrical properties of novel multiferroic Bi(0.7)Dy(0.3)FeO(3) (BDFO) thin films deposited using the pulsed laser deposition technique on p-type (100) silicon substrate are reported. Using high frequency capacitance-voltage (C-V) measurements, the dielectric constant, effective oxide charge density and interface state density were estimated. The results suggest the potential application of multiferroic BDFO films as gate dielectric material for novel memory devices that can be electrically written and magnetically read.|
|Appears in Collections:||Article|
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