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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/8505

Title: The impact of nitrogen engineering in silicon oxynitride gate dielectric on negative-bias temperature instability of p-MOSFETs: A study by ultrafast on-the-fly I-DLIN technique
Authors: MAHETA, VD
OLSEN, C
AHMED, K
MAHAPATRA, S
Keywords: pmos nbti degradation
comprehensive model
trap generation
interface
dependence
recovery
stress
Issue Date: 2008
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: IEEE TRANSACTIONS ON ELECTRON DEVICES, 55(7), 1630-1638
Abstract: Degradation of p-MOSFET parameters during negative-bias temperature instability (NBTI) stress is studied for different nitridation conditions of the silicon oxynitride (SiON) gate dielectric, using a recently developed ultrafast on-the-fly I-DLIN technique having 1-mu s resolution. It is shown that the degradation magnitude, as well as its time, temperature, and field dependence, is governed by nitrogen (N) density at the Si/SiON interface. The relative contribution of interface trap generation and hole trapping to overall degradation as varying interfacial N density is qualitatively discussed. Plasma oxynitride films having low interfacial N density show interface trap dominated degradation, whereas relative hole trapping contribution increases for thermal oxynitride films having high N density at the Si/SiON interface.
URI: http://dx.doi.org/10.1109/TED.2008.923524
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8505
http://hdl.handle.net/10054/8505
ISSN: 0018-9383
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