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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/8504

Title: The effect of single-halo doping on the low-frequency noise performance of deep submicrometer MOSFETs
Authors: NARASIMHULU, K
SETTY, IV
RAO, VR
Keywords: analog device design
mos-transistors
cmos technology
Issue Date: 2006
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: IEEE ELECTRON DEVICE LETTERS, 27(12), 995-997
Abstract: In this letter, the low-frequency noise performance of single-halo (SH) devices is reported, and the physical mechanisms are identified. Experimental results show that, at constant gate overdrive voltages, SH devices show reduced low-frequency noise levels compared to the conventional devices. However, under constant current bias conditions, the noise reduction is less substantial. Low-frequency noise dependence on channel length is also investigated for SH devices based on the electrical measurements and analytical calculations.
URI: http://dx.doi.org/10.1109/LED.2006.886409
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8504
http://hdl.handle.net/10054/8504
ISSN: 0741-3106
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