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|Title:||The effect of single-halo doping on the low-frequency noise performance of deep submicrometer MOSFETs|
|Keywords:||Analog Device Design|
|Publisher:||IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC|
|Citation:||IEEE ELECTRON DEVICE LETTERS, 27(12), 995-997|
|Abstract:||In this letter, the low-frequency noise performance of single-halo (SH) devices is reported, and the physical mechanisms are identified. Experimental results show that, at constant gate overdrive voltages, SH devices show reduced low-frequency noise levels compared to the conventional devices. However, under constant current bias conditions, the noise reduction is less substantial. Low-frequency noise dependence on channel length is also investigated for SH devices based on the electrical measurements and analytical calculations.|
|Appears in Collections:||Article|
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