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|Title: ||Solution-Processed Bootstrapped Organic Inverters Based on P3HT With a High-k Gate Dielectric Material|
|Authors: ||RAVAL, HN|
|Issue Date: ||2009|
|Publisher: ||IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC|
|Citation: ||IEEE ELECTRON DEVICE LETTERS, 30(5), 484-486|
|Abstract: ||In this letter, the integration of a high-k gate dielectric has been demonstrated for achieving low-operating-voltage organic field-effect transistors (OFETs) and circuits based on solution-processed poly(3-hexylthiophene) (P3HT). We have successfully demonstrated all-p-type organic circuits based on P3HT operating at below 4 V supply voltage. The switching behavior is improved by using the bootstrapping technique, with the boot-strapped inverter showing good results with a dc gain (A(v)) of -1.7 and V(OH) and V(OL) values of 3.3 and 0.35 V, respectively. The output swing of the bootstrapped inverter is improved by about 40% when compared to that of simple all-p-type inverters, as demonstrated by using experimental characterizations.|
|Appears in Collections:||Article|
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