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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/8481

Title: Solution-Processed Bootstrapped Organic Inverters Based on P3HT With a High-k Gate Dielectric Material
Authors: RAVAL, HN
TIWARI, SP
NAVAN, RR
MHAISALKAR, SG
RAO, VR
Keywords: thin-film-transistor
circuits
load
driver
layer
Issue Date: 2009
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: IEEE ELECTRON DEVICE LETTERS, 30(5), 484-486
Abstract: In this letter, the integration of a high-k gate dielectric has been demonstrated for achieving low-operating-voltage organic field-effect transistors (OFETs) and circuits based on solution-processed poly(3-hexylthiophene) (P3HT). We have successfully demonstrated all-p-type organic circuits based on P3HT operating at below 4 V supply voltage. The switching behavior is improved by using the bootstrapping technique, with the boot-strapped inverter showing good results with a dc gain (A(v)) of -1.7 and V(OH) and V(OL) values of 3.3 and 0.35 V, respectively. The output swing of the bootstrapped inverter is improved by about 40% when compared to that of simple all-p-type inverters, as demonstrated by using experimental characterizations.
URI: http://dx.doi.org/10.1109/LED.2009.2016679
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8481
http://hdl.handle.net/10054/8481
ISSN: 0741-3106
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