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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/8444

Title: Performance and Reliability Study of Single-Layer and Dual-Layer Platinum Nanocrystal Flash Memory Devices Under NAND Operation
Authors: SINGH, PK
BISHT, G
AULUCK, K
SIVATHEJA, M
HOFMANN, R
SINGH, KK
MAHAPATRA, S
Keywords: design optimization
part ii
fabrication
al2o3
sonos
nc
Issue Date: 2010
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: IEEE TRANSACTIONS ON ELECTRON DEVICES, 57(8), 1829-1837
Abstract: Memory window (MW) and the retention of single-layer (SL) and dual-layer (DL) platinum (Pt) nanocrystal (NC) devices are extensively studied before and after program/erase (P/E) cycling. DL devices show better charge storage capability and reliability over the SL devices. Up to 50% improvement in the stored charge is estimated in the DL device over SL when P/E is performed at equal field. Excellent high temperature and postcycling retention capabilities of SL and DL devices are shown. The impact of the interlayer film (ILF) thickness on the retention of the DL structure is reported. While SL devices show poor P/E cycling endurance, DL cycling is shown to meet the minimum requirements of the multilevel cell (MLC) operation.
URI: http://dx.doi.org/10.1109/TED.2010.2050961
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8444
http://hdl.handle.net/10054/8444
ISSN: 0018-9383
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