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|Title: ||Part I: On the Behavior of STI-Type DeNMOS Device Under ESD Conditions|
|Authors: ||SHRIVASTAVA, M|
|Issue Date: ||2010|
|Publisher: ||IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC|
|Citation: ||IEEE TRANSACTIONS ON ELECTRON DEVICES, 57(9), 2235-2242|
|Abstract: ||We present experimental and simulation studies of shallow trench isolation (STI)-type drain-extended n-channel metal-oxide-semiconductor devices under human body model (HBM)-like electrostatic discharge (ESD) conditions. Physical insight toward pulse-to-pulse instability is given. Both the current (I(TLP)) and time evolution of various events such as junction breakdown, parasitic bipolar triggering, and the base push-out effect are discussed in detail. Differences between the 2-D and 3-D simulation (modeling) approaches are presented, and the importance of 3-D technology-computer-aided-design-based modeling is discussed. Furthermore, a deeper physical insight toward the base push-out is given, which shows significant power dissipation due of space charge build-up, which is found at the onset of self-heating in the 2-D plane.|
|Appears in Collections:||Article|
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