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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/8435

Title: Part I: On the Behavior of STI-Type DeNMOS Device Under ESD Conditions
Authors: SHRIVASTAVA, M
GOSSNER, H
SHOJAEI, M
RAO, VR
Issue Date: 2010
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: IEEE TRANSACTIONS ON ELECTRON DEVICES, 57(9), 2235-2242
Abstract: We present experimental and simulation studies of shallow trench isolation (STI)-type drain-extended n-channel metal-oxide-semiconductor devices under human body model (HBM)-like electrostatic discharge (ESD) conditions. Physical insight toward pulse-to-pulse instability is given. Both the current (I(TLP)) and time evolution of various events such as junction breakdown, parasitic bipolar triggering, and the base push-out effect are discussed in detail. Differences between the 2-D and 3-D simulation (modeling) approaches are presented, and the importance of 3-D technology-computer-aided-design-based modeling is discussed. Furthermore, a deeper physical insight toward the base push-out is given, which shows significant power dissipation due of space charge build-up, which is found at the onset of self-heating in the 2-D plane.
URI: http://dx.doi.org/10.1109/TED.2010.2055276
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8435
http://hdl.handle.net/10054/8435
ISSN: 0018-9383
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