Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/xmlui/handle/10054/8434
Title: Part I: Mixed-Signal Performance of Various High-Voltage Drain-Extended MOS Devices
Authors: SHRIVASTAVA, M
BAGHINI, MS
GOSSNER, H
RAO, VR
Keywords: Circuit
Field
Esd
Issue Date: 2010
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: IEEE TRANSACTIONS ON ELECTRON DEVICES, 57(2), 448-457
Abstract: In this paper, the optimization issues of various drain-extended devices are discussed for input/output applications. Themixed-signal performance, impact of process variations, and gate oxide reliability of these devices are compared. Lightly doped drain MOS (LDDMOS) was found to have a moderate performance advantage as compared to shallow trench isolation (STI) and non-STI drain-extended MOS (DeMOS) devices. Non-STI DeMOS devices have improved circuit performance but suffer from the worst gate oxide reliability. Incorporating an STI region underneath the gate-drain overlap improves the gate oxide reliability, although it degrades the mixed-signal characteristics of the device. The single-halo nature of DeMOS devices has been shown to be effective in suppressing the short-channel effects.
URI: http://dx.doi.org/10.1109/TED.2009.2036796
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8434
http://hdl.handle.net/10054/8434
ISSN: 0018-9383
Appears in Collections:Article

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