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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/8426

Title: Optimization of gate leakage and NBTI for plasma-nitrided gate oxides by numerical and analytical models
Authors: ISLAM, AE
GUPTA, G
AHMED, KZ
MAHAPATRA, S
ALAM, MA
Keywords: bias temperature instability
direct tunneling current
nitrogen concentration
semiconductor devices
comprehensive model
dielectrics
oxynitride
interface
degradation
dependence
Issue Date: 2008
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: IEEE TRANSACTIONS ON ELECTRON DEVICES, 55(5), 1143-1152
Abstract: Reduction in static-power dissipation (gate leakage) by using nitrided oxides comes at the expense of enhanced negative-bias temperature instability (NBTI). Therefore, determining the nitrogen content in gate oxides that can simultaneously optimize gate-leakage and NBTI degradation is a problem of significant technological relevance. In this paper, we experimentally and theoretically analyze wide range of gate-leakage and NBTI stress data from a variety of plasma-oxynitride gate dielectric devices to establish an optimization scheme for gate-leakage and NBTI degradation. Calculating electric fields and leakage current both numerically and using simple analytical expressions, we demonstrate a design diagram for arbitrary nitrogen concentration and effective oxide thickness that may be used for process and IC design.
URI: http://dx.doi.org/10.1109/TED.2008.919545
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8426
http://hdl.handle.net/10054/8426
ISSN: 0018-9383
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