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|Title: ||Optimization of gate leakage and NBTI for plasma-nitrided gate oxides by numerical and analytical models|
|Authors: ||ISLAM, AE|
|Keywords: ||bias temperature instability|
direct tunneling current
|Issue Date: ||2008|
|Publisher: ||IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC|
|Citation: ||IEEE TRANSACTIONS ON ELECTRON DEVICES, 55(5), 1143-1152|
|Abstract: ||Reduction in static-power dissipation (gate leakage) by using nitrided oxides comes at the expense of enhanced negative-bias temperature instability (NBTI). Therefore, determining the nitrogen content in gate oxides that can simultaneously optimize gate-leakage and NBTI degradation is a problem of significant technological relevance. In this paper, we experimentally and theoretically analyze wide range of gate-leakage and NBTI stress data from a variety of plasma-oxynitride gate dielectric devices to establish an optimization scheme for gate-leakage and NBTI degradation. Calculating electric fields and leakage current both numerically and using simple analytical expressions, we demonstrate a design diagram for arbitrary nitrogen concentration and effective oxide thickness that may be used for process and IC design.|
|Appears in Collections:||Article|
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