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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/8394

Title: Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics
Authors: RAO, VR
SHARMA, DK
VASI, J
Keywords: interface-state generation
silicon dioxide
semiconductor devices
radiation
oxide
sio2
field
nitridation
dependence
injection
Issue Date: 1996
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: IEEE TRANSACTIONS ON ELECTRON DEVICES, 43(9), 1467-1470
Abstract: In this study we report for the first time results on neutral electron trap generation in reoxidised nitrided oxide dielectrics under various radiation doses and bias conditions and compare the results with the conventional oxides. We see very little electron trap creation in RNO dielectrics for radiation doses upto 5 Mrad (Si) and for bias fields up to +/-2.5 MV/cm. We explain our results in RNO and oxide dielectrics using a three step defect creation model.
URI: http://dspace.library.iitb.ac.in/xmlui/handle/10054/8394
http://hdl.handle.net/10054/8394
ISSN: 0018-9383
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