Please use this identifier to cite or link to this item:
|Title:||Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics|
|Publisher:||IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC|
|Citation:||IEEE TRANSACTIONS ON ELECTRON DEVICES, 43(9), 1467-1470|
|Abstract:||In this study we report for the first time results on neutral electron trap generation in reoxidised nitrided oxide dielectrics under various radiation doses and bias conditions and compare the results with the conventional oxides. We see very little electron trap creation in RNO dielectrics for radiation doses upto 5 Mrad (Si) and for bias fields up to +/-2.5 MV/cm. We explain our results in RNO and oxide dielectrics using a three step defect creation model.|
|Appears in Collections:||Article|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.