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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/8368

Title: Low-Operating-Voltage Operation and Improvement in Sensitivity With Passivated OFET Sensors for Determining Total Dose Radiation
Authors: RAVAL, HN
RAO, VR
Keywords: field-effect transistor
gate
performance
electron
mobility
Issue Date: 2010
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: IEEE ELECTRON DEVICE LETTERS, 31(12), 1482-1484
Abstract: Using high-k material in a gate dielectric stack, low-operating-voltage organic semiconducting material sensors for determining total dose radiation are proposed. To improve the stability of organic semiconducting layer in the atmospheric conditions, a thin silicon nitride layer deposited by hot-wire CVD process was used as a passivation layer. Furthermore, in order to achieve higher sensitivity, a parallel connection of organic field-effect transistors (OFETs) is explored in this letter. These sensors are exposed to ionizing radiation using a cobalt-60 radiation source for different total dose values. A three-times improvement in sensitivity was observed in the OFF current with a three-OFET array.
URI: http://dx.doi.org/10.1109/LED.2010.2074179
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8368
http://hdl.handle.net/10054/8368
ISSN: 0741-3106
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