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|Title: ||Isolation of NBTI Stress Generated Interface Trap and Hole-Trapping Components in PNO p-MOSFETs|
|Authors: ||MAHAPATRA, S|
|Keywords: ||bias temperature instability|
|Issue Date: ||2009|
|Publisher: ||IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC|
|Citation: ||IEEE TRANSACTIONS ON ELECTRON DEVICES, 56(2), 236-242|
|Abstract: ||In this paper, a simple phenomenological technique is used to isolate the hole-trapping and interface trap generation components during negative bias temperature instability (NBTI) stress in plasma nitrided oxide (PNO) p-MOSFETs. This isolation methodology reconciles the apparent differences between experimentally measured NBTI power-law time exponents obtained by ultrafast on-the-fly I(DLIN) method, which are the ones obtained using slightly delayed but very long-time measurements, and the corresponding exponents predicted by the reaction-diffusion model. A systematic validation of the isolation technique is provided through degradation data taken over a broad range of operating conditions and a wide variety of PNO processes, to establish the robustness and uniqueness of the separation procedure.|
|Appears in Collections:||Article|
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