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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/8363

Title: Isolation of NBTI Stress Generated Interface Trap and Hole-Trapping Components in PNO p-MOSFETs
Authors: MAHAPATRA, S
MAHETA, VD
ISLAM, AE
ALAM, MA
Keywords: bias temperature instability
i-dlin technique
degradation
dependence
diffusion
mechanism
hydrogen
model
Issue Date: 2009
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: IEEE TRANSACTIONS ON ELECTRON DEVICES, 56(2), 236-242
Abstract: In this paper, a simple phenomenological technique is used to isolate the hole-trapping and interface trap generation components during negative bias temperature instability (NBTI) stress in plasma nitrided oxide (PNO) p-MOSFETs. This isolation methodology reconciles the apparent differences between experimentally measured NBTI power-law time exponents obtained by ultrafast on-the-fly I(DLIN) method, which are the ones obtained using slightly delayed but very long-time measurements, and the corresponding exponents predicted by the reaction-diffusion model. A systematic validation of the isolation technique is provided through degradation data taken over a broad range of operating conditions and a wide variety of PNO processes, to establish the robustness and uniqueness of the separation procedure.
URI: http://dx.doi.org/10.1109/TED.2008.2010569
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8363
http://hdl.handle.net/10054/8363
ISSN: 0018-9383
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