Exploration of velocity overshoot in a high-performance deep sub-0.1-mu m SOI MOSFET with asymmetric channel profile

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/8324

Title:	Exploration of velocity overshoot in a high-performance deep sub-0.1-mu m SOI MOSFET with asymmetric channel profile
Authors:	CHENG, BH RAO, VR WOO, JCS
Keywords:	silicon inversion-layers
Issue Date:	1999
Publisher:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation:	IEEE ELECTRON DEVICE LETTERS, 20(10), 538-540
Abstract:	The electron velocity overshoot phenomenon in the inversion layer is experimentally investigated using a novel thin-film silicon-on-insulator (SOI) test structure with channel lengths down to 0.08 mu m, The uniformity of the carrier density and tangential field is realized by employing a lateral asymmetric channel (LAC) profile. The electron drift velocity observed in this work is 9.5 x 10(6) cm/s for a device with L(eff) = 0.08 mu m at 300 K. The upward trend in electron velocity can be clearly noticed for decreasing channel lengths.
URI:	http://dspace.library.iitb.ac.in/xmlui/handle/10054/8324 http://hdl.handle.net/10054/8324
ISSN:	0741-3106
Appears in Collections:	Article

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