Please use this identifier to cite or link to this item:
|Title:||Exploration of velocity overshoot in a high-performance deep sub-0.1-mu m SOI MOSFET with asymmetric channel profile|
|Publisher:||IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC|
|Citation:||IEEE ELECTRON DEVICE LETTERS, 20(10), 538-540|
|Abstract:||The electron velocity overshoot phenomenon in the inversion layer is experimentally investigated using a novel thin-film silicon-on-insulator (SOI) test structure with channel lengths down to 0.08 mu m, The uniformity of the carrier density and tangential field is realized by employing a lateral asymmetric channel (LAC) profile. The electron drift velocity observed in this work is 9.5 x 10(6) cm/s for a device with L(eff) = 0.08 mu m at 300 K. The upward trend in electron velocity can be clearly noticed for decreasing channel lengths.|
|Appears in Collections:||Article|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.