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|Title:||Explanation of P/E cycling impact on drain disturb in flash EEPROMs under CHE and CHISEL programming operation|
|Keywords:||Enhanced Gate Current|
|Publisher:||IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC|
|Citation:||IEEE TRANSACTIONS ON ELECTRON DEVICES, 52(4), 534-540|
|Abstract:||The impact of program/erase (P/E) cycling on drain disturb in NOR Flash EEPROM cells under channel hot electron (CHE) and channel-initiated secondary electron (CHISEL) programming operation is studied. Charge gain disturb increases and charge loss disturb decreases after cycling under CHE and CHISEL operation. Carefully designed experiments and fullband Monte Carlo simulations were used to explain this behavior. P/E cycling induced degradation in gate coupling coefficient and the resulting increase in. source/drain leakage, reduction in hand-to-hand tunneling and change in carrier injection area seems to explain well the behavior of CHE and CHISEL drain disturb after cycling.|
|Appears in Collections:||Article|
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