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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/8310

Title: Effect of SiN on Performance and Reliability of Charge Trap Flash (CTF) Under Fowler-Nordheim Tunneling Program/Erase Operation
Authors: SANDHYA, C
GANGULY, U
CHATTAR, N
OLSEN, C
SEUTTER, SM
DATE, L
HUNG, R
VASI, JA
MAHAPATRA, S
Keywords: nitride
Issue Date: 2009
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: IEEE ELECTRON DEVICE LETTERS, 30(2), 171-173
Abstract: Silicon-nitride trap layer stoichiometry in charge trap flash (CTF) memory strongly impacts electron and hole trap properties, memory performance, and reliability. Important tradeoffs between program/erase (P/E) levels (memory window), P- and E-state retention loss, and E-state window closure during cycling are shown. Increasing the Si richness of the SiN layer improves memory window, cycling endurance, and E-state retention loss but at the cost of higher P-state retention loss. The choice of SiN stoichiometry to optimize CTF memory performance and reliability is discussed.
URI: http://dx.doi.org/10.1109/LED.2008.2009552
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8310
http://hdl.handle.net/10054/8310
ISSN: 0741-3106
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