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| Title: | Role of electron traps in the radiation hardness of thermally nitrided silicon dioxide |
| Authors: | CHANDORKAR, AN
RAMESH, K
AGARWAL, A
VASI, J |
| Keywords: | dielectric thin films
electron traps
nitridation
radiation hardening (electronics) |
| Issue Date: | 1991 |
| Publisher: | IEEE |
| Citation: | IEEE Electron Device Letters 12 (12), 658-60 |
| Abstract: | A number of samples of thermally nitrided SiO2 with varying concentrations of electron traps were studied in an attempt to correlate the radiation-induced oxide charge with the number of electron traps. Also studied were the detrapping characteristics of irradiated devices. Etch-back experiments were performed to locate the centroid of the trapped charge. The results show that electron trapping does play a role in the improved radiation hardness of nitrided SiO2, but is not the sole cause of it. |
| URI: | http://dx.doi.org/10.1109/55.116946
http://hdl.handle.net/10054/83
http://dspace.library.iitb.ac.in/xmlui/handle/10054/83 |
| ISSN: | 0741-3106 |
| Appears in Collections: | Article
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