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|Title:||Role of electron traps in the radiation hardness of thermally nitrided silicon dioxide|
|Keywords:||Dielectric Thin Films|
Radiation Hardening (Electronics)
|Citation:||IEEE Electron Device Letters 12 (12), 658-60|
|Abstract:||A number of samples of thermally nitrided SiO2 with varying concentrations of electron traps were studied in an attempt to correlate the radiation-induced oxide charge with the number of electron traps. Also studied were the detrapping characteristics of irradiated devices. Etch-back experiments were performed to locate the centroid of the trapped charge. The results show that electron trapping does play a role in the improved radiation hardness of nitrided SiO2, but is not the sole cause of it.|
|Appears in Collections:||Article|
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