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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/83

Title: Role of electron traps in the radiation hardness of thermally nitrided silicon dioxide
Authors: CHANDORKAR, AN
RAMESH, K
AGARWAL, A
VASI, J
Keywords: dielectric thin films
electron traps
nitridation
radiation hardening (electronics)
Issue Date: 1991
Publisher: IEEE
Citation: IEEE Electron Device Letters 12 (12), 658-60
Abstract: A number of samples of thermally nitrided SiO2 with varying concentrations of electron traps were studied in an attempt to correlate the radiation-induced oxide charge with the number of electron traps. Also studied were the detrapping characteristics of irradiated devices. Etch-back experiments were performed to locate the centroid of the trapped charge. The results show that electron trapping does play a role in the improved radiation hardness of nitrided SiO2, but is not the sole cause of it.
URI: http://dx.doi.org/10.1109/55.116946
http://hdl.handle.net/10054/83
http://dspace.library.iitb.ac.in/xmlui/handle/10054/83
ISSN: 0741-3106
Appears in Collections:Article

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