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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/8254

Title: CHISEL programming operation of scaled NOR flash EEPROMs - Effect of voltage scaling, device scaling and technological parameters
Authors: MOHAPATRA, NR
NAIR, DR
MAHAPATRA, S
RAO, VR
SHUKURI, S
BUDE, JD
Keywords: enhanced gate current
vlsi mosfets
part ii
memory
cells
reliability
Issue Date: 2003
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: IEEE TRANSACTIONS ON ELECTRON DEVICES, 50(10), 2104-2111
Abstract: The impact of programming biases, device scaling and variation of technological parameters on channel initiated secondary electron (CHISEL) programming performance of scaled NOR Flash electrically erasable programmable read-only memories (EEPROMs) is studied in detail. It is shown that CHISEL operation offers faster programming for all bias conditions and remains highly efficient at lower biases compared to conventional channel hot electron (CHE) operation. The physical mechanism responsible for this behavior is explained using full band Monte Carlo simulations. CHISEL programming efficiency is shown to degrade with device scaling, and various technological parameter optimization schemes required for its improvement are explored. The resulting increase in drain disturbs is also studied and the impact of technological parameter optimization on the programming performance versus drain disturb tradeoff is analyzed. It is shown that by judicious choice of technological parameters the advantage of CHISEL programming can be maintained for deeply scaled electrically erasable programmable read-only memory (EEPROM) cells.
URI: http://dx.doi.org/10.1109/TED.2003.817275
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8254
http://hdl.handle.net/10054/8254
ISSN: 0018-9383
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