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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/8217

Title: An Improvement to the Numerical Robustness of the Surface Potential Approximation for Double-Gate MOSFETs
Authors: HARIHARAN, V
VASI, J
RAO, VR
Keywords: current model
drain-current
dg mosfet
compact model
Issue Date: 2009
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: IEEE TRANSACTIONS ON ELECTRON DEVICES, 56(3), 529-532
Abstract: In developing the drain current model of a symmetric double-gate MOSFET, one encounters a transcendental equation relating the value of an intermediate variable beta to the gate and drain voltages. In this brief, we present an enhancement to an existing approximation for beta, which improves its numerical robustness. We also benchmark our suggested enhancement and show that our enhancement is as computationally efficient as the original approximation but is numerically much more robust, with an accuracy that is comparable to the original approximation.
URI: http://dx.doi.org/10.1109/TED.2008.2011721
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8217
http://hdl.handle.net/10054/8217
ISSN: 0018-9383
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