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|Title: ||A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device|
|Authors: ||SHRIVASTAVA, M|
|Issue Date: ||2010|
|Publisher: ||IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC|
|Citation: ||IEEE TRANSACTIONS ON ELECTRON DEVICES, 57(12), 3536-3539|
|Abstract: ||We investigated the surface band-to-band tunnelling (BTBT) current under the OFF-state condition in drain-extended MOS (DeMOS) devices. We found significant gate-induced drain leakage current due to surface BTBT, which was also reported earlier as the dominant cause of early time-dependent dielectric breakdown and device failure. Furthermore, a layout solution for the existing DeMOS device is proposed in order to mitigate the surface BTBT current and the associated gate oxide reliability issues, without sacrificing the mixed-signal performance of the device.|
|Appears in Collections:||Article|
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