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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/10054/8204

Title: A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device
Authors: SHRIVASTAVA, M
JAIN, R
BAGHINI, MS
GOSSNER, H
RAO, VR
Issue Date: 2010
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation: IEEE TRANSACTIONS ON ELECTRON DEVICES, 57(12), 3536-3539
Abstract: We investigated the surface band-to-band tunnelling (BTBT) current under the OFF-state condition in drain-extended MOS (DeMOS) devices. We found significant gate-induced drain leakage current due to surface BTBT, which was also reported earlier as the dominant cause of early time-dependent dielectric breakdown and device failure. Furthermore, a layout solution for the existing DeMOS device is proposed in order to mitigate the surface BTBT current and the associated gate oxide reliability issues, without sacrificing the mixed-signal performance of the device.
URI: http://dx.doi.org/10.1109/TED.2010.2082549
http://dspace.library.iitb.ac.in/xmlui/handle/10054/8204
http://hdl.handle.net/10054/8204
ISSN: 0018-9383
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